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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.TM High Energy Power FET
D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. * Avalanche Energy Capability Specified at Elevated Temperature * Low Stored Gate Charge for Efficient Switching * Internal Source-to-Drain Diode Designed to Replace External Zener Transient Suppressor -- Absorbs High Energy in the Avalanche Mode * Source-to-Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
D
MTB3N60E
Motorola Preferred Device
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
(R)
G S CASE 418B-03, Style 2 D2PAK
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Non-repetitive Drain Current -- Continuous Drain Current -- Continuous @ 100C Drain Current -- Pulsed Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C(1) Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 600 600 20 40 3.0 2.4 14 75 0.6 2.5 - 55 to 150 Unit Vdc Vdc Vdc Vpk Adc
Watts W/C Watts C
TJ, Tstg
UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (TJ < 150C)
Single Pulse Drain-to-Source Avalanche Energy -- TJ = 25C Single Pulse Drain-to-Source Avalanche Energy -- TJ = 100C Repetitive Pulse Drain-to-Source Avalanche Energy WDSR(2) WDSR(3) 290 46 7.5 mJ
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient(1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds (1) When surface mounted to an FR-4 board using the minimum recommended pad size (2) VDD = 50 V, ID = 3.0 A (3) Pulse Width and frequency is limited by TJ(max) and thermal response
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
RJC RJA RJA TL
1.67 62.5 50 260
C/W
C
E-FET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
(c) Motorola TMOS Motorola, Inc. 1997
Power MOSFET Transistor Device Data
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MTB3N60E
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 600 V, VGS = 0) (VDS = 480 V, VGS = 0, TJ = 125C) Gate-Body Leakage Current -- Forward (VGSF = 20 Vdc, VDS = 0) Gate-Body Leakage Current -- Reverse (VGSR = 20 Vdc, VDS = 0) ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) (TJ = 125C) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.5 A) Drain-to-Source On-Voltage (VGS = 10 Vdc) (ID = 3.0 A) (ID = 1.5 A, TJ = 100C) Forward Transconductance (VDS = 15 Vdc, ID = 1.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS* Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Forward Turn-On Time Reverse Recovery Time INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) * Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. ** Limited by circuit inductance. Ld -- -- Ls -- 3.5 4.5 7.5 -- -- -- nH (IS = 3 0 A di/d = 100 A/ ) 3.0 A, di/dt A/s) VSD ton trr -- -- -- -- ** 400 1.4 -- -- Vdc ns (VDS = 420 V, ID = 3 0 A V 3.0 A, VGS = 10 V) 3.0 A, (VDD = 300 V, ID 3 0 A V RL = 100 RG = 12 , , VGS(on) = 10 V) ) td(on) tr td(off) tf Qg Qgs Qgd -- -- -- -- -- -- -- 23 34 58 35 28 5.0 17 -- -- -- -- 31 -- -- nC ns (VDS = 25 V, VGS = 0, V 0 f = 1.0 MHz) Ciss Coss Crss -- -- -- 770 105 19 -- -- -- pF VGS(th) 2.0 1.5 RDS(on) VDS(on) -- -- gFS 1.5 -- -- -- 9.0 7.5 -- mhos -- -- -- 2.1 4.0 3.5 2.2 Ohms Vdc Vdc V(BR)DSS IDSS -- -- IGSSF IGSSR -- -- -- -- -- -- 10 100 100 100 nAdc nAdc 600 -- -- Vdc Adc Symbol Min Typ Max Unit
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Motorola TMOS Power MOSFET Transistor Device Data
MTB3N60E
PACKAGE DIMENSIONS
C E -B-
4
V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 STYLE 2: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40
A
1 2 3
S
-T-
SEATING PLANE
K G D 3 PL 0.13 (0.005) H
M
J
DIM A B C D E G H J K S V
TB
M GATE DRAIN SOURCE DRAIN
CASE 418B-03 ISSUE C
Motorola TMOS Power MOSFET Transistor Device Data
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MTB3N60E
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
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MTB3N60E/D Motorola TMOS Power MOSFET Transistor Device Data

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